Ultra High Vacuum Chemical Vapor Deposition
The cold wall, ultra high vacuum chemical vapor deposition chamber is used mainly for nanowire growth. The available growth and doping precursors are SiH4, GeH4, PH3, and B2H6. A resistive graphite substrate heater encased in pyrolytic boron-nitride allows for growth temperatures up to 700 °C. The tool can operate in dual mode: ultra-high vacuum, used for epi- growth, and low pressure (up to 10 Torr), used for nanowire growth.